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rivulet    
n. 小河

小河

rivulet
n 1: a small stream [synonym: {rivulet}, {rill}, {run}, {runnel},
{streamlet}]

Rivulet \Riv"u*let\, n. [Earlier rivolet, It. rivoletto, a dim.
fr. rivolo, L. rivulus, dim. of rivus a brook. CF. {Rival},
{Rite}.]
A small stream or brook; a streamlet.
[1913 Webster]

By fountain or by shady rivulet
He sought them. --Milton.
[1913 Webster]


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  • Silicon epitaxial growth process using trichlorosilane gas in a single . . .
    The gas flow rates of hydrogen and trichlorosilane (20% diluted in hydrogen gas) from Inlet 1 were 100 and 15 slm, respectively The gas flow rate of hydrogen from Inlet 2 was 115 slm The pressure in the reactor chamber was maintained at 700 Torr throughout the entire epitaxial growth process
  • Application Note Semiconductor - Agilent
    Carrier gas flow rate (L min) 0 7 Makeup gas (L min) 0 8 0 5 He cell gas flow rate (mL min) 0 5 2 Trichlorosilane (TCS) is an intermediate compound used in the manufacture of high purity polysilicon Since TCS is a The only practical approach is therefore to transfer liquid TCS to the lab for analysis In this work, liquid TCS was
  • Reactor-scale Model of Silicon Epitaxy Process - SC Solutions
    silicon using trichlorosilane (SiHCl3) This study uses the one-step, finite-rate chemistry for the 2-D reactor geometry described by Habuka et al [1], and successfully reproduces the published results A commercial software package, CFD-ACE [2], popular in the semiconductor industry, was used for our modeling work
  • CN101723373A - Control pipeline of trichlorosilane or silicon . . .
    The present invention relates to the pilot piping of trichlorosilane in a kind of epitaxy technique (TCS) supply system Native system is that a kind of gas distributing device connects TCS flow container and bubbler simultaneously, can be by bubbler for supplying with epitaxial furnace, also can directly use the TCS flow container as bubbler to the epitaxial furnace air feed, utilize native
  • Epitaxy - University of Texas at Austin
    – Vapor-Phase Epitaxy (VPE) • CVD: Metal-organic VPE (MOCVD, OMVPE, ) • PVD: Molecular Beam Epitaxy(MBE) – Liquid-Phase Epitaxy (LPE) • mainly for compound semiconductors – Solid-Phase Epitaxy • recystallization of amorphized or polycrystalline layers • applications – bipolar, BiCMOS IC's • 2-5 µm in high speed digital
  • Process Optimization and Modeling of the Silicon Growth in . . .
    Abstract: In this study, the effect of operating conditions of the chemical vapor deposition process on the silicon growth rate in a trichlorosilane-hydrogen (TCS-H 2) system was evaluated The influence of five parameters, including wafer rotation, TCS fraction, pressure, temperature, and mass flow rate was investigated
  • Saturator Bubbler Systems | LOGITEX Reinstmedientechnik
    Saturator and bubbler systems for high-purity liquids (precursors) Used for years in the semiconductor, fiber-optical and coating industries Trichlorosilane with hydrogen (TCS in H 2) as carrier gas; Silicon tetrachloride in oxygen (SiCl 4 with O 2) Germanium tetrachloride in oxygen (GeCl 4 with O 2) Phosphorus oxychloride (POCl 3 with O 2)
  • Real time evaluation of silicon epitaxial growth process by exhaust gas . . .
    The practical problem and operation are explained by taking into account the situation in the trichlorosilane bubbler Because the vapor pressure of the liquid trichlorosilane at room temperature [19] is low, any additional vaporization technique is useful for supplying a sufficient amount of trichlorosilane gas to the epitaxial reactor
  • Point-of-Use Sampling and Metal Analysis for Trichlorosilane - Balazs
    a pressurized liquid, or diluted in a carrier gas, such as hydrogen TCS sampling is particularly challenging as it is a flammable, highly reactive, and corrosive gas The literature related to TCS metals analysis focuses primarily on quantification of group III and group V elements: B, P, and As Gas chromatography combined with
  • Epitaxial growth on 4H-SiC by TCS as a silicon precursor - JOS
    peratures with various gas flow rates has been performed in a horizontal hot wall CVD reactor, using trichlorosilane (TCS) as a silicon precursor source together with ethylene as a carbon precursor source The growth rate reached 23 m h and the optimal epilayer was obtained at 1600 C with a TCS flow rate of 12 sccm in C Si of 0 42, which has a
  • SC SOLUTIONS Reactor-scale Modeling of Silicon Epitaxy
    Epitaxy is the deposition of a crystalline layer on a crystalline substrate It is a Chemical Vapor Deposition (CVD) process that is widely used in the semiconductor industry Silicon epitaxy involves decomposition of chlorosilanes (commonly trichlorosilane or TCS) at high temperature (~ 900°C -1150°C), with hydrogen as the reducing agent and





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